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Title: Gallium surface diffusion on GaAs (001) surfaces measured by crystallization dynamics of Ga droplets

We present accurate measurements of Ga cation surface diffusion on GaAs surfaces. The measurement method relies on atomic force microscopy measurement of the morphology of nano–disks that evolve, under group V supply, from nanoscale group III droplets, earlier deposited on the substrate surface. The dependence of the radius of such nano-droplets on crystallization conditions gives direct access to Ga diffusion length. We found an activation energy for Ga on GaAs(001) diffusion E{sub A}=1.31±0.15 eV, a diffusivity prefactor of D₀=0.53(×2.1±1) cm² s⁻¹ that we compare with the values present in literature. The obtained results permit to better understand the fundamental physics governing the motion of group III ad–atoms on III–V crystal surfaces and the fabrication of designable nanostructures.
Authors:
; ; ;  [1] ;  [2]
  1. L–NESS and Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, Via Cozzi 55, I–20125 Milano (Italy)
  2. L–NESS and CNR–IFN, via Anzani 42, I-22100 Como (Italy)
Publication Date:
OSTI Identifier:
22306017
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 11; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ACTIVATION ENERGY; ATOMIC FORCE MICROSCOPY; CATIONS; CRYSTALLIZATION; CRYSTALS; DIFFUSION; DIFFUSION LENGTH; DROPLETS; EV RANGE; FABRICATION; GALLIUM; GALLIUM ARSENIDES; NANOSTRUCTURES; SUBSTRATES; SURFACES