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Title: Thermally stable perpendicular magnetic anisotropy features of Ta/TaO{sub x}/Ta/CoFeB/MgO/W stacks via TaO{sub x} underlayer insertion

We report that a TaO{sub x} underlayer enhances the stability of perpendicular magnetic anisotropy (PMA) in TaO{sub x}/Ta/CoFeB/MgO stacks during annealing; control of oxygen content in the TaO{sub x} layer is critical. X-ray photoelectron spectroscopy observations revealed clear suppression of Ta atom diffusion towards the CoFeB/MgO interface or MgO regions. The TaO{sub x} underlayer possibly served as a diffusion sponge, permitting some thermally activated Ta atoms to impregnate the TaO{sub x} underlayer via a diffusion path, such as grain boundaries. We propose a possible mechanism for enhanced PMA stability based on diffusion of thermally activated Ta atoms.
Authors:
; ;  [1] ;  [2] ;  [3] ;  [1] ;  [4]
  1. Novel Functional Materials and Devices Laboratory, Research Institute for Natural Science, Department of Physics, Hanyang University, Seoul 133-791 (Korea, Republic of)
  2. Division of Nano-Scale Semiconductor Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)
  3. Nano Quantum Electronics Lab, Department of Electronics and Computer Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)
  4. (Korea, Republic of)
Publication Date:
OSTI Identifier:
22306000
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 11; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANISOTROPY; ANNEALING; BORON COMPOUNDS; COBALT COMPOUNDS; DIFFUSION; GRAIN BOUNDARIES; INTERFACES; IRON COMPOUNDS; LAYERS; MAGNESIUM OXIDES; MAGNETIC PROPERTIES; STABILITY; TANTALUM; TANTALUM OXIDES; TERNARY ALLOY SYSTEMS; TUNGSTEN; X-RAY PHOTOELECTRON SPECTROSCOPY