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Title: The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior

In this paper, we describe the influence of the intrinsic indium fluctuation in the InGaN quantum wells on the carrier transport, efficiency droop, and emission spectrum in GaN-based light emitting diodes (LEDs). Both real and randomly generated indium fluctuations were used in 3D simulations and compared to quantum wells with a uniform indium distribution. We found that without further hypothesis the simulations of electrical and optical properties in LEDs such as carrier transport, radiative and Auger recombination, and efficiency droop are greatly improved by considering natural nanoscale indium fluctuations.
Authors:
;  [1] ; ;  [2]
  1. Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan (China)
  2. Department of Materials, University of California, Santa Barbara, California 93106 (United States)
Publication Date:
OSTI Identifier:
22305982
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 11; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AUGER EFFECT; COMPUTERIZED SIMULATION; DISTRIBUTION; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; EMISSION SPECTRA; FLUCTUATIONS; GALLIUM NITRIDES; INDIUM; INDIUM ALLOYS; LIGHT EMITTING DIODES; OPTICAL PROPERTIES; QUANTUM WELLS; RANDOMNESS; RECOMBINATION; SIMULATION; THREE-DIMENSIONAL CALCULATIONS