The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior

Yang, Tsung-Jui; Wu, Yuh-Renn; Shivaraman, Ravi; Speck, James S.

doi:10.1063/1.4896103

Title: The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior

Journal Article · Sun Sep 21 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4896103· OSTI ID:22305982

Yang, Tsung-Jui; Wu, Yuh-Renn ^[1]; Shivaraman, Ravi; Speck, James S. ^[2]

Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan (China)
Department of Materials, University of California, Santa Barbara, California 93106 (United States)

In this paper, we describe the influence of the intrinsic indium fluctuation in the InGaN quantum wells on the carrier transport, efficiency droop, and emission spectrum in GaN-based light emitting diodes (LEDs). Both real and randomly generated indium fluctuations were used in 3D simulations and compared to quantum wells with a uniform indium distribution. We found that without further hypothesis the simulations of electrical and optical properties in LEDs such as carrier transport, radiative and Auger recombination, and efficiency droop are greatly improved by considering natural nanoscale indium fluctuations.

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OSTI ID:: 22305982

Journal Information:: Journal of Applied Physics, Vol. 116, Issue 11; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979

Country of Publication:: United States

Language:: English

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