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Title: Luminescence and superradiance in electron-beam-excited Al{sub x}Ga{1-sub x}N

Luminescence and superradiance characteristics of 0.5–1.2-μm thick Al{sub x}Ga{sub 1-x}N films grown by molecular-beam epitaxy on sapphire substrates were studied under excitation of the films with low-energy (<20 keV) and high-energy (170 keV) electron beams. In both cases, the luminescence spectra looked quite similarly; they exhibited a band-edge luminescence with x-dependent wavelength ranging from 365 nm to 310 nm and a broadband emission taking over the whole visible spectral region. Superradiance within the broad band was obtained by pumping the samples with powerful an electron beam in the form of an open-discharge-generated filament.
Authors:
; ; ;  [1] ; ;  [1] ;  [2] ; ;  [3]
  1. Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, 13, Lavrentieva av., Novosibirsk 630090 (Russian Federation)
  2. (Russian Federation)
  3. Institute of Electrophysics, Ural Division of the Russian Academy of Sciences, 106, Amundsen str., Ekaterinburg 620016 (Russian Federation)
Publication Date:
OSTI Identifier:
22305981
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 11; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; ELECTRON BEAMS; EXCITATION; FILAMENTS; FILMS; GALLIUM NITRIDES; KEV RANGE; LUMINESCENCE; MOLECULAR BEAM EPITAXY; PUMPING; SAPPHIRE; SPECTRA; SUBSTRATES; SUPERRADIANCE; WAVELENGTHS