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Title: Electrical modeling of InAs/GaSb superlattice mid-wavelength infrared pin photodiode to analyze experimental dark current characteristics

Dark current characteristics of 7 Monolayers (ML) InAs/ 4 ML GaSb SL pin photodiodes are simulated using ATLAS software. Using appropriate models and material parameters, we obtain good agreement between the simulated and the experimental dark current curves of photodiodes grown by molecular beam epitaxy. The n-type non-intentionally-doped (nid) SL samples exhibit a dependence of the lifetime with temperature following the T{sup -1/2} law, signature of Shockley-Read-Hall (SRH) Generation-Recombination current. We also studied the dependence of the dark current with the absorber doping level. It appears that the absorber doping level must not exceed a value of 2×10¹⁵cm⁻³, above this value the dark current is increasing with increased doping level. However for this doping value, a dark current as low as 5 × 10⁻⁹ A/cm², at 50 mV reverse bias at 77 K can be obtained.
Authors:
; ;  [1]
  1. Univ. Montpellier, IES, UMR 5214, F-34000 Montpellier, France and CNRS, IES, UMR 5214, F-34000 Montpellier (France)
Publication Date:
OSTI Identifier:
22305979
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 11; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COMPUTERIZED SIMULATION; CURRENTS; DOPED MATERIALS; GALLIUM ANTIMONIDES; INDIUM ARSENIDES; LIFETIME; MOLECULAR BEAM EPITAXY; PHOTODIODES; RECOMBINATION; SUPERLATTICES