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Title: Erratum: “Tunable photoluminescence of self-assembled GeSi quantum dots by B{sup +} implantation and rapid thermal annealing” [J. Appl. Phys. 115, 233502 (2014)]

No abstract prepared.
Authors:
; ; ; ; ; ;  [1]
  1. National Key Laboratory for Surface Physics and Department of Physics, Fudan University, Shanghai 200433 (China)
Publication Date:
OSTI Identifier:
22305978
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; BORON IONS; GERMANIUM SILICIDES; ION IMPLANTATION; PHOTOLUMINESCENCE; QUANTUM DOTS