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Title: A method to determine fault vectors in 4H-SiC from stacking sequences observed on high resolution transmission electron microscopy images

A new method has been developed to determine the fault vectors associated with stacking faults in 4H-SiC from their stacking sequences observed on high resolution TEM images. This method, analogous to the Burgers circuit technique for determination of dislocation Burgers vector, involves determination of the vectors required in the projection of the perfect lattice to correct the deviated path constructed in the faulted material. Results for several different stacking faults were compared with fault vectors determined from X-ray topographic contrast analysis and were found to be consistent. This technique is expected to applicable to all structures comprising corner shared tetrahedra.
Authors:
; ; ;  [1] ; ; ; ; ;  [2] ; ; ; ;  [3]
  1. Department of Materials Science and Engineering, Stony Brook University, Stony Brook, New York 11790 (United States)
  2. Dow Corning Compound Semiconductor Solutions, Midland, Michigan 48686 (United States)
  3. Center for Functional Materials, Brookhaven National Laboratory, Upton, New York 11973 (United States)
Publication Date:
OSTI Identifier:
22305974
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BURGERS VECTOR; DISLOCATIONS; RESOLUTION; SILICON CARBIDES; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY; X RADIATION