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Title: Atomic structures and electronic properties of 2H-NbSe{sub 2}: The impact of Ti doping

Abstract

Layered transition metal dichalcogenides have aroused renewed interest as electronic materials, yet their electronic performances could be modified by chemical doping. Here, we perform a systematic first-principles calculation to investigate the effect of Ti doping on atomic structure and electronic properties of the 2H-NbSe{sub 2}. We consider a total of three possible Ti-doping models and find that both the substitution and intercalated models are chemically preferred with the intercalation model being more favorable than the substitution one. Structural analyses reveal a slight lattice distortion triggered by Ti doping, but the original structure of 2H-NbSe{sub 2} is maintained. We also observe an expansion of c axis in the substituted model, which is attributed to the reduced van der Waals interaction arising from the increased Se-Se bond length. Our calculations also predict that the electron transport properties can be enhanced by the Ti doping, especially for the Ti-intercalated 2H-NbSe{sub 2}, which should be beneficial for the realization of superconductivity. Furthermore, the covalence element is found in the Ti-Se bonds, which is ascribed to the hybridization of Ti 3d and Se 4p orbitals. The findings indicate that doping of transition metals can be regarded as a useful way to tailor electronic states somore » as to improve electron transport properties of 2H-NbSe{sub 2}.« less

Authors:
; ; ; ; ;  [1]; ;  [2];  [3]
  1. Institute for Advanced Materials, School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013 (China)
  2. State Key Laboratory of Rare Earth Resources Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China)
  3. Advanced Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)
Publication Date:
OSTI Identifier:
22305953
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 116; Journal Issue: 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BOND LENGTHS; CHALCOGENIDES; CLATHRATES; COMPUTERIZED SIMULATION; COVALENCE; CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; ELECTRONS; EXPANSION; INTERACTIONS; NIOBIUM SELENIDES; SUPERCONDUCTIVITY; TITANIUM ADDITIONS; TRANSITION ELEMENTS; VAN DER WAALS FORCES

Citation Formats

Li, Hongping, Chen, Lin, Zhang, Kun, Liang, Jiaqing, Tang, Hua, Li, Changsheng, Liu, Xiaojuan, Meng, Jian, and Wang, Zhongchang. Atomic structures and electronic properties of 2H-NbSe{sub 2}: The impact of Ti doping. United States: N. p., 2014. Web. doi:10.1063/1.4895489.
Li, Hongping, Chen, Lin, Zhang, Kun, Liang, Jiaqing, Tang, Hua, Li, Changsheng, Liu, Xiaojuan, Meng, Jian, & Wang, Zhongchang. Atomic structures and electronic properties of 2H-NbSe{sub 2}: The impact of Ti doping. United States. https://doi.org/10.1063/1.4895489
Li, Hongping, Chen, Lin, Zhang, Kun, Liang, Jiaqing, Tang, Hua, Li, Changsheng, Liu, Xiaojuan, Meng, Jian, and Wang, Zhongchang. 2014. "Atomic structures and electronic properties of 2H-NbSe{sub 2}: The impact of Ti doping". United States. https://doi.org/10.1063/1.4895489.
@article{osti_22305953,
title = {Atomic structures and electronic properties of 2H-NbSe{sub 2}: The impact of Ti doping},
author = {Li, Hongping and Chen, Lin and Zhang, Kun and Liang, Jiaqing and Tang, Hua and Li, Changsheng and Liu, Xiaojuan and Meng, Jian and Wang, Zhongchang},
abstractNote = {Layered transition metal dichalcogenides have aroused renewed interest as electronic materials, yet their electronic performances could be modified by chemical doping. Here, we perform a systematic first-principles calculation to investigate the effect of Ti doping on atomic structure and electronic properties of the 2H-NbSe{sub 2}. We consider a total of three possible Ti-doping models and find that both the substitution and intercalated models are chemically preferred with the intercalation model being more favorable than the substitution one. Structural analyses reveal a slight lattice distortion triggered by Ti doping, but the original structure of 2H-NbSe{sub 2} is maintained. We also observe an expansion of c axis in the substituted model, which is attributed to the reduced van der Waals interaction arising from the increased Se-Se bond length. Our calculations also predict that the electron transport properties can be enhanced by the Ti doping, especially for the Ti-intercalated 2H-NbSe{sub 2}, which should be beneficial for the realization of superconductivity. Furthermore, the covalence element is found in the Ti-Se bonds, which is ascribed to the hybridization of Ti 3d and Se 4p orbitals. The findings indicate that doping of transition metals can be regarded as a useful way to tailor electronic states so as to improve electron transport properties of 2H-NbSe{sub 2}.},
doi = {10.1063/1.4895489},
url = {https://www.osti.gov/biblio/22305953}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 10,
volume = 116,
place = {United States},
year = {Sun Sep 14 00:00:00 EDT 2014},
month = {Sun Sep 14 00:00:00 EDT 2014}
}