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Title: Impact of strain on electronic defects in (Mg,Zn)O thin films

We have investigated the impact of strain on the incorporation and the properties of extended and point defects in (Mg,Zn)O thin films by means of photoluminescence, X-ray diffraction, deep-level transient spectroscopy (DLTS), and deep-level optical spectroscopy. The recombination line Y₂, previously detected in ZnO thin films grown on an Al-doped ZnO buffer layer and attributed to tensile strain, was exclusively found in (Mg,Zn)O samples being under tensile strain and is absent in relaxed or compressively strained thin films. Furthermore a structural defect E3´ can be detected via DLTS measurements and is only incorporated in tensile strained samples. Finally it is shown that the omnipresent deep-level E3 in ZnO can only be optically recharged in relaxed ZnO samples.
Authors:
; ; ; ; ;  [1]
  1. Universität Leipzig, Institut für Experimentelle Physik II, Linnéstraße 5, 04103 Leipzig (Germany)
Publication Date:
OSTI Identifier:
22305948
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BUFFERS; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; DOPED MATERIALS; LAYERS; MAGNESIUM OXIDES; PHOTOLUMINESCENCE; POINT DEFECTS; RECOMBINATION; STRAINS; THIN FILMS; X-RAY DIFFRACTION; ZINC OXIDES