A combined kick-out and dissociative diffusion mechanism of grown-in Be in InGaAs and InGaAsP. A new finite difference-Bairstow method for solution of the diffusion equations

Journal Article · Sun Sep 14 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4894617· OSTI ID:22305946

Martin, Patrick; Murray, Hugues ^[1]

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1. Normandie Université-Université de Rouen-ENSICAEN-UMR 6508 LaMIPS, Laboratoire commun CNRS-NXP-PRESTO-ENSICAEN-UCBN 2, rue de la Girafe BP 5120, F-14079 Caen (France)

Experimental results on the diffusion of grown-in beryllium (Be) in indium gallium arsenide (In{sub 0.53}Ga{sub 0.47}As) and indium gallium arsenide phosphide (In{sub 0.73}Ga{sub 0.27}As{sub 0.58}P{sub 0.42}) gas source molecular beam epitaxy alloys lattice-matched to indium phosphide (InP) can be successfully explained in terms of a combined kick-out and dissociative diffusion mechanism, involving neutral Be interstitials (Be{sub i}{sup 0}), singly positively charged gallium (Ga), indium (In) self-interstitials (I{sub III}{sup +}) and singly positively charged Ga, In vacancies (V{sub III}{sup +}). A new numerical method of solution to the system of diffusion equations, based on the finite difference approximations and Bairstow's method, is proposed.

• OSTI ID: 22305946
• Journal Information: Journal of Applied Physics, Vol. 116, Issue 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ARSENIC COMPOUNDS
BERYLLIUM
DIFFUSION
DIFFUSION EQUATIONS
GALLIUM
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INTERSTITIALS
MOLECULAR BEAM EPITAXY
PHOSPHORUS COMPOUNDS
QUATERNARY ALLOY SYSTEMS
TERNARY ALLOY SYSTEMS
VACANCIES