Investigation of solution-processed bismuth-niobium-oxide films
- Green Device Research Center, Japan Advanced Institute of Science and Technology (JAIST), 2-13 Asahidai, Nomi, Ishikawa 923-1211 (Japan)
- School of Material Science, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan)
- ERATO Shimoda Nano-Liquid Process Project, Japan Science and Technology Agency (JST), 2-13 Asahidai, Nomi, Ishikawa 923-1211 (Japan)
- Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan)
The characteristics of bismuth-niobium-oxide (BNO) films prepared using a solution process were investigated. The BNO film annealed at 550°C involving three phases: an amorphous phase, Bi₃NbO₇ fluorite microcrystals, and Nb-rich cubic pyrochlore microcrystals. The cubic pyrochlore structure, which was the main phase in this film, has not previously been reported in BNO films. The relative dielectric constant of the BNO film was approximately 140, which is much higher than that of a corresponding film prepared using a conventional vacuum sputtering process. Notably, the cubic pyrochlore microcrystals disappeared with increasing annealing temperature and were replaced with triclinic β-BiNbO₄ crystals at 590°C. The relative dielectric constant also decreased with increasing annealing temperature. Therefore, the high relative dielectric constant of the BNO film annealed at 550°C is thought to result from the BNO cubic pyrochlore structure. In addition, the BNO films annealed at 500°C contained approximately 6.5 atm.% carbon, which was lost at approximately 550°C. This result suggests that the carbon in the BNO film played an important role in the formation of the cubic pyrochlore structure.
- OSTI ID:
- 22305834
- Journal Information:
- Journal of Applied Physics, Vol. 116, Issue 15; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
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