Enhanced optical property in quaternary GaInAsSb/AlGaAsSb quantum wells

Journal Article · Tue Oct 21 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4898389· OSTI ID:22305816

Lin, Chien-Hung; Lee, Chien-Ping ^[1]

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1. Department of Electronics Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan (China)

High quality GaInAsSb/AlGaAsSb quantum wells (QWs) have been grown by molecular beam epitaxy using proper interface treatments. By controlling the group-V elements at interfaces, we obtained excellent optical quality QWs, which were free from undesired localized trap states, which may otherwise severely affect the exciton recombination. Strong and highly efficient exciton emissions up to room temperature with a wavelength of 2.2 μm were observed. A comprehensive investigation on the QW quality was carried out using temperature dependent and power dependent photoluminescence (PL) measurements. The PL emission intensity remains nearly constant at low temperatures and is free from the PL quenching from the defect induced localized states. The temperature dependent emission energy had a bulk-like behavior, indicating high quality well/barrier interfaces. Because of the uniformity of the QWs and smooth interfaces, the low temperature limit of inhomogeneous line width broadening is as small as 5 meV.

• OSTI ID: 22305816
• Journal Information: Journal of Applied Physics, Vol. 116, Issue 15; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Publisher: American Institute of Physics (AIP)
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM COMPOUNDS
ANTIMONY COMPOUNDS
ARSENIC COMPOUNDS
CRYSTAL DEFECTS
DIFFUSION BARRIERS
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INTERFACES
LINE WIDTHS
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
QUANTUM WELLS
QUATERNARY ALLOY SYSTEMS
QUENCHING
RECOMBINATION
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
TRAPS
WAVELENGTHS