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Title: Boron Doped diamond films as electron donors in photovoltaics: An X-ray absorption and hard X-ray photoemission study

Highly boron-doped diamond films are investigated for their potential as transparent electron donors in solar cells. Specifically, the valence band offset between a diamond film (as electron donor) and Cu(In,Ga)Se₂ (CIGS) as light absorber is determined by a combination of soft X-ray absorption spectroscopy and hard X-ray photoelectron spectroscopy, which is more depth-penetrating than standard soft X-ray photoelectron spectroscopy. In addition, a theoretical analysis of the valence band is performed, based on GW quasiparticle band calculations. The valence band offset is found to be small: VBO=VBM{sub CIGS} – VBM{sub diamond}=0.3 eV±0.1 eV at the CIGS/Diamond interface and 0.0 eV±0.1 eV from CIGS to bulk diamond. These results provide a promising starting point for optimizing the band offset by choosing absorber materials with a slightly lower valence band maximum.
Authors:
;  [1] ;  [2] ; ; ; ;  [3] ;  [2] ; ;  [4] ;  [5] ;  [6] ;  [2] ; ;  [7] ;  [1] ;  [8]
  1. Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
  2. (United States)
  3. Department of Physics, University of California, Davis, California 95616 (United States)
  4. Ångström Solar Center, Uppsala University, Box 534, SE-751 21 Uppsala (Sweden)
  5. Department of Physics, University of California, Berkeley, California 94720 (United States)
  6. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
  7. Department of Chemistry, University of Wisconsin Madison, Madison, Wisconsin 53706 (United States)
  8. Department of Physics, University of Wisconsin Madison, Madison, Wisconsin 53706 (United States)
Publication Date:
OSTI Identifier:
22305789
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION SPECTROSCOPY; BINDING ENERGY; BORON ADDITIONS; COMPUTERIZED SIMULATION; DIAMONDS; DOPED MATERIALS; ELECTRONS; FILMS; HARD X RADIATION; INTERFACES; PHOTOELECTRON SPECTROSCOPY; PHOTOEMISSION; PHOTOVOLTAIC EFFECT; SOFT X RADIATION; SOLAR CELLS