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Title: Preparation of Ag Schottky contacts on n-type GaN bulk crystals grown in nitrogen rich atmosphere by the hydride vapor phase epitaxy technique

Electrical properties of Schottky contacts on n-type GaN grown in nitrogen rich atmosphere with different N/Ga ratios by hydride vapor phase epitaxy were investigated. We show that tunneling of electrons from the conduction band of GaN to the metal is dominant in our samples. The quality of Schottky contacts does not only depend on surface preparation but also on the growth conditions of the crystals. Schottky contacts on these crystals show an increasing deterioration when higher N/Ga growth ratios are used. We correlate our results with the presence of negatively charged gallium vacancies in the samples. These charges compensate the positively charged donors and lead to a significant increase in series resistance.
Authors:
; ;  [1] ; ;  [2]
  1. Technische Universität Dresden, 01062 Dresden (Germany)
  2. Freiberger Compound Materials GmbH, 09599 Freiberg (Germany)
Publication Date:
OSTI Identifier:
22305788
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ATMOSPHERES; CONCENTRATION RATIO; CRYSTAL GROWTH; CRYSTALS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELECTRONS; GALLIUM NITRIDES; HYDRIDES; NITROGEN; N-TYPE CONDUCTORS; SCHOTTKY EFFECT; SURFACES; TUNNEL EFFECT; VACANCIES; VAPOR PHASE EPITAXY