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Title: Native point defects in GaSb

We have applied positron annihilation spectroscopy to study native point defects in Te-doped n-type and nominally undoped p-type GaSb single crystals. The results show that the dominant vacancy defect trapping positrons in bulk GaSb is the gallium monovacancy. The temperature dependence of the average positron lifetime in both p- and n-type GaSb indicates that negative ion type defects with no associated open volume compete with the Ga vacancies. Based on comparison with theoretical predictions, these negative ions are identified as Ga antisites. The concentrations of these negatively charged defects exceed the Ga vacancy concentrations nearly by an order of magnitude. We conclude that the Ga antisite is the native defect responsible for p-type conductivity in GaSb single crystals.
Authors:
; ; ;  [1]
  1. Department of Applied Physics, Aalto University School of Science, P.O. Box 14100, FI-00076 AALTO (Finland)
Publication Date:
OSTI Identifier:
22305786
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANIONS; ANNIHILATION; COMPARATIVE EVALUATIONS; CRYSTAL DEFECTS; DOPED MATERIALS; ECOLOGICAL CONCENTRATION; FORECASTING; GALLIUM; GALLIUM ANTIMONIDES; LIFETIME; MONOCRYSTALS; N-TYPE CONDUCTORS; POINT DEFECTS; P-TYPE CONDUCTORS; SPECTROSCOPY; TELLURIUM ADDITIONS; TEMPERATURE DEPENDENCE; TRAPPING; VACANCIES