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Title: Large interface diffusion in endotaxial growth of MnP films on GaP substrates

The metal organic vapor deposition of MnP films on GaP (100) substrates is shown to have a substantial endotaxial component. A study of the growth time evolution of the endotaxial depths of MnP grains reveals a diffusion-controlled growth with a relatively large diffusion coefficient of Mn in GaP. The value (2.2 ± 1.5) × 10⁻¹⁵ (cm²/s) obtained at 650 °C is at least two orders of magnitude larger than the reported Mn diffusion in bulk GaP. GaP surface mounds provide further indirect evidence that this large diffusion coefficient is concurrent with the out-diffusion of Ga atoms at the growing MnP/GaP interface. No trace of dislocations could be observed at or near this interface, which strongly suggests that Mn diffusion occurs through vacant sites generated by the difference between the crystallographic structures of MnP and GaP.
Authors:
; ;  [1]
  1. Regroupement québécoise sur les matériaux de pointe (RQMP), Département de Génie Physique, Polytechnique Montréal, C.P. 6079, succ. Centre-ville, Montréal, Québec H3C 3A7 (Canada)
Publication Date:
OSTI Identifier:
22305746
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 13; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ATOMS; CRYSTAL GROWTH; CRYSTALLOGRAPHY; DIFFUSION; DISLOCATIONS; EVOLUTION; FILMS; GALLIUM PHOSPHIDES; INTERFACES; MANGANESE PHOSPHIDES; ORGANOMETALLIC COMPOUNDS; SUBSTRATES; SURFACES