skip to main content

SciTech ConnectSciTech Connect

Title: Nanosecond laser-induced phase transitions in pulsed laser deposition-deposited GeTe films

Phase transformations between amorphous and crystalline states induced by irradiation of pulsed laser deposition grown GeTe thin films with nanosecond laser pulses at 248 nm and pulse duration of 20 ns are studied. Structural and optical properties of the Ge-Te phase-change films were studied by X-ray diffraction and optical reflectivity measurements as a function of the number of laser pulses between 0 and 30 pulses and of the laser fluence up to 195 mJ/cm². A reversible phase transition by using pulse numbers ≥ 5 at a fluence above the threshold fluence between 11 and 14 mJ/cm² for crystallization and single pulses at a fluence between 162 and 182 mJ/cm² for amorphization could be proved. For laser fluences from 36 up to 130 mJ/cm², a high optical contrast of 14.7% between the amorphous and crystalline state is measured. A simple model is used that allows the discussion on the distribution of temperature in dependency on the laser fluence.
Authors:
; ; ; ; ;  [1]
  1. Leibniz Institute of Surface Modification, Permoserstr. 15, D-04318, Leipzig (Germany)
Publication Date:
OSTI Identifier:
22305740
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 13; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AMORPHOUS STATE; CRYSTALLIZATION; CRYSTALS; DISTRIBUTION; ENERGY BEAM DEPOSITION; GERMANIUM TELLURIDES; LASER RADIATION; PULSED IRRADIATION; PULSES; REFLECTIVITY; THIN FILMS; X-RAY DIFFRACTION