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Title: Band offsets of TiZnSnO/Si heterojunction determined by x-ray photoelectron spectroscopy

Abstract

X-ray photoelectron spectroscopy (XPS) was utilized to measure the valence band offset (ΔE{sub V}) of the TiZnSnO (TZTO)/Si heterojunction. TZTO films were deposited on Si (100) substrates using magnetron sputtering at room temperature. By using the Zn 2p{sub 3/2} and Sn 3d{sub 5/2} energy levels as references, the value of ΔE{sub V} was calculated to be 2.69 ± 0.1 eV. Combining with the experimental optical energy band gap of 3.98 eV for TZTO extracted from the UV-vis transmittance spectrum, the conduction band offset (ΔE{sub C}) was deduced to be 0.17 ± 0.1 eV at the interface. Hence, the energy band alignment of the heterojunction was determined accurately, showing a type-I form. This will be beneficial for the design and application of TZTO/Si hybrid devices.

Authors:
; ; ; ; ;  [1];  [2];  [3]
  1. State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)
  2. Key Laboratory of Advanced Display and System Application, Ministry of Education, Shanghai University, Shanghai 200072 (China)
  3. Xinyi PV Products (Anhui) Holdings LTD, Xinyi PV Glass Industrial Zone, No. 2 Xinyi Road, ETDZ, Wuhu 241009 (China)
Publication Date:
OSTI Identifier:
22305730
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 116; Journal Issue: 12; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALIGNMENT; ENERGY LEVELS; EV RANGE; FILMS; HETEROJUNCTIONS; HYBRID SYSTEMS; INTERFACES; MAGNETRONS; OXYGEN COMPOUNDS; SILICON; SPECTRA; SPUTTERING; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; TIN COMPOUNDS; TITANIUM COMPOUNDS; X-RAY PHOTOELECTRON SPECTROSCOPY; ZINC COMPOUNDS

Citation Formats

Sun, R. J., Jiang, Q. J., Yan, W. C., Feng, L. S., Lu, B., Ye, Z. Z., Li, X. F., Li, X. D., Lu, J. G., E-mail: lujianguo@zju.edu.cn, and Key Laboratory of Advanced Display and System Application, Ministry of Education, Shanghai University, Shanghai 200072. Band offsets of TiZnSnO/Si heterojunction determined by x-ray photoelectron spectroscopy. United States: N. p., 2014. Web. doi:10.1063/1.4896764.
Sun, R. J., Jiang, Q. J., Yan, W. C., Feng, L. S., Lu, B., Ye, Z. Z., Li, X. F., Li, X. D., Lu, J. G., E-mail: lujianguo@zju.edu.cn, & Key Laboratory of Advanced Display and System Application, Ministry of Education, Shanghai University, Shanghai 200072. Band offsets of TiZnSnO/Si heterojunction determined by x-ray photoelectron spectroscopy. United States. https://doi.org/10.1063/1.4896764
Sun, R. J., Jiang, Q. J., Yan, W. C., Feng, L. S., Lu, B., Ye, Z. Z., Li, X. F., Li, X. D., Lu, J. G., E-mail: lujianguo@zju.edu.cn, and Key Laboratory of Advanced Display and System Application, Ministry of Education, Shanghai University, Shanghai 200072. 2014. "Band offsets of TiZnSnO/Si heterojunction determined by x-ray photoelectron spectroscopy". United States. https://doi.org/10.1063/1.4896764.
@article{osti_22305730,
title = {Band offsets of TiZnSnO/Si heterojunction determined by x-ray photoelectron spectroscopy},
author = {Sun, R. J. and Jiang, Q. J. and Yan, W. C. and Feng, L. S. and Lu, B. and Ye, Z. Z. and Li, X. F. and Li, X. D. and Lu, J. G., E-mail: lujianguo@zju.edu.cn and Key Laboratory of Advanced Display and System Application, Ministry of Education, Shanghai University, Shanghai 200072},
abstractNote = {X-ray photoelectron spectroscopy (XPS) was utilized to measure the valence band offset (ΔE{sub V}) of the TiZnSnO (TZTO)/Si heterojunction. TZTO films were deposited on Si (100) substrates using magnetron sputtering at room temperature. By using the Zn 2p{sub 3/2} and Sn 3d{sub 5/2} energy levels as references, the value of ΔE{sub V} was calculated to be 2.69 ± 0.1 eV. Combining with the experimental optical energy band gap of 3.98 eV for TZTO extracted from the UV-vis transmittance spectrum, the conduction band offset (ΔE{sub C}) was deduced to be 0.17 ± 0.1 eV at the interface. Hence, the energy band alignment of the heterojunction was determined accurately, showing a type-I form. This will be beneficial for the design and application of TZTO/Si hybrid devices.},
doi = {10.1063/1.4896764},
url = {https://www.osti.gov/biblio/22305730}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 12,
volume = 116,
place = {United States},
year = {Sun Sep 28 00:00:00 EDT 2014},
month = {Sun Sep 28 00:00:00 EDT 2014}
}