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Title: Formation kinetics of trivacancy-oxygen pairs in silicon

The formation of donor and acceptor states of the trivacancy-oxygen (V₃O) complex in p- and n-type silicon, respectively, has been studied in detail by means of deep level transient spectroscopy. The samples were irradiated with 1.8 MeV protons, and it was found that acceptor and donor states of V₃ disappear at annealing temperatures below 200 °C, with a transition from the metastable (110) planar configuration to the stable fourfold coordinated configuration. Annealing above 200 °C unveils the formation of two levels with energy positions at E{sub c} –0.34 eV and E{sub c} –0.46 eV in n-type samples and two levels at E{sub v} + 0.24 eV and E{sub v} + 0.11 eV in p-type samples. (E{sub c} and E{sub v} denote the conduction and valence band edge, respectively.) The amplitudes of these levels show an almost one-to-one correlation with those of the V₃-related levels occurring after irradiation. In accordance with recent reports in the literature, the emerging levels are ascribed to the V₃O complex; single and double negative charge states in n-type samples and single and double positive charge states in p-type samples. By undertaking isothermal formation of the V₃O complex in p-type samples which exhibits first-order kinetics, the diffusivitymore » of V₃ in the neutral charge state is determined to be (8.5 ± 3.5) × 10₋₂ exp [–(1.50 ± 0.04) eV/kT] cm²/s.« less
Authors:
; ; ;  [1]
  1. Department of Physics, Center for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048, Blindern, N-0316 Oslo (Norway)
Publication Date:
OSTI Identifier:
22305729
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 12; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AMPLITUDES; ANNEALING; CHARGE STATES; CONFIGURATION; CORRELATIONS; DEEP LEVEL TRANSIENT SPECTROSCOPY; EV RANGE; IRRADIATION; MEV RANGE 01-10; N-TYPE CONDUCTORS; OXYGEN; PROTON BEAMS; P-TYPE CONDUCTORS; SILICON; VACANCIES; VALENCE