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Title: Nano-scale NiSi and n-type silicon based Schottky barrier diode as a near infra-red detector for room temperature operation

The fabrication of nano-scale NiSi/n-Si Schottky barrier diode by rapid thermal annealing process is reported. The characterization of the nano-scale NiSi film was performed using Micro-Raman Spectroscopy and X-ray Photoelectron Spectroscopy (XPS). The thickness of the film (27 nm) has been measured by cross-sectional Secondary Electron Microscopy and XPS based depth profile method. Current–voltage (I–V) characteristics show an excellent rectification ratio (I{sub ON}/I{sub OFF} = 10⁵) at a bias voltage of ±1 V. The diode ideality factor is 1.28. The barrier height was also determined independently based on I–V (0.62 eV) and high frequency capacitance–voltage technique (0.76 eV), and the correlation between them has explained. The diode photo-response was measured in the range of 1.35–2.5 μm under different reverse bias conditions (0.0–1.0 V). The response is observed to increase with increasing reverse bias. From the photo-responsivity study, the zero bias barrier height was determined to be 0.54 eV.
Authors:
 [1] ;  [2] ; ;  [3] ;  [2] ;  [4]
  1. Centre for Nanotechnology and Science, Indian Institute of Technology Bombay, Mumbai 400076 (India)
  2. (India)
  3. Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076 (India)
  4. Department of Earth Science, Indian Institute of Technology Bombay, Mumbai 400076 (India)
Publication Date:
OSTI Identifier:
22305727
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 12; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; CAPACITANCE; CORRELATIONS; CURRENTS; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ELECTRON MICROSCOPY; EV RANGE; FILMS; NICKEL SILICIDES; RAMAN SPECTROSCOPY; SCHOTTKY BARRIER DIODES; SILICON; TEMPERATURE RANGE 0273-0400 K; THICKNESS; X-RAY PHOTOELECTRON SPECTROSCOPY