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Title: Atomic intermixing and interface roughness in short-period InAs/GaSb superlattices for infrared photodetectors

A set of advanced characterization methods, including high-resolution X-ray diffraction (measurements and simulations), cross-sectional scanning tunneling microscopy, and high-angle annular dark-field scanning transmission electron microscopy is applied to quantify the interface roughness and atomic intermixing (in both cation and anion sub-lattices) in short period (6–7 nm) InAs/GaSb superlattices intended for mid-wavelength (M) and long-wavelength (L) infrared detectors. The undesired atomic intermixing and interface roughness in the L-samples were found to be considerably lower than in the M-samples. In all specimens, anion intermixing is much higher than that in the cation sub-lattice. Possible origins of these findings are discussed.
Authors:
; ;  [1] ;  [2] ;  [1] ;  [3]
  1. Department of Materials Science and Engineering, Technion—Israel Institute of Technology, Haifa 32000 (Israel)
  2. Solid State Institute, Technion—Israel Institute of Technology, Haifa 32000 (Israel)
  3. (Israel)
Publication Date:
OSTI Identifier:
22305723
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 12; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANIONS; CATIONS; GALLIUM ANTIMONIDES; INDIUM ARSENIDES; INFRARED RADIATION; INTERFACES; PHOTODETECTORS; RESOLUTION; ROUGHNESS; SCANNING TUNNELING MICROSCOPY; SIMULATION; SUPERLATTICES; TRANSMISSION ELECTRON MICROSCOPY; WAVELENGTHS; X-RAY DIFFRACTION