Extremely scaled high-k/In₀.₅₃Ga₀.₄₇As gate stacks with low leakage and low interface trap densities
- Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)
Highly scaled gate dielectric stacks with low leakage and low interface trap densities are required for complementary metal-oxide-semiconductor technology with III-V semiconductor channels. Here, we show that a novel pre-deposition technique, consisting of alternating cycles of nitrogen plasma and tetrakis(dimethylamino)titanium, allows for HfO₂ and ZrO₂ gate stacks with extremely high accumulation capacitance densities of more than 5 μF/cm₂ at 1 MHz, low leakage current, low frequency dispersion, and low midgap interface trap densities (10¹²cm⁻²eV⁻¹range). Using x-ray photoelectron spectroscopy, we show that the interface contains TiO₂ and small quantities of In₂O₃, but no detectable Ga- or As-oxides, or As-As bonding. The results allow for insights into the microscopic mechanisms that control leakage and frequency dispersion in high-k/III-V gate stacks.
- OSTI ID:
- 22305715
- Journal Information:
- Journal of Applied Physics, Vol. 116, Issue 12; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ARSENIC COMPOUNDS
BONDING
CAPACITANCE
DEPOSITION
DIELECTRIC MATERIALS
DISPERSIONS
GALLIUM COMPOUNDS
HAFNIUM OXIDES
INDIUM COMPOUNDS
INDIUM OXIDES
INTERFACES
LEAKAGE CURRENT
SEMICONDUCTOR MATERIALS
STACKS
TITANIUM OXIDES
TRAPS
X-RAY PHOTOELECTRON SPECTROSCOPY
ZIRCONIUM OXIDES