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Title: Cat-doping: Novel method for phosphorus and boron shallow doping in crystalline silicon at 80 °C

Phosphorus (P) or boron (B) atoms can be doped at temperatures as low as 80 to 350 °C, when crystalline silicon (c-Si) is exposed only for a few minutes to species generated by catalytic cracking reaction of phosphine (PH₃) or diborane (B₂H₆) with heated tungsten (W) catalyzer. This paper is to investigate systematically this novel doping method, “Cat-doping”, in detail. The electrical properties of P or B doped layers are studied by the Van der Pauw method based on the Hall effects measurement. The profiles of P or B atoms in c-Si are observed by secondary ion mass spectrometry mainly from back side of samples to eliminate knock-on effects. It is confirmed that the surface of p-type c-Si is converted to n-type by P Cat-doping at 80 °C, and similarly, that of n-type c-Si is to p-type by B Cat-doping. The doping depth is as shallow as 5 nm or less and the electrically activated doping concentration is 10¹⁸ to 10¹⁹cm⁻³ for both P and B doping. It is also found that the surface potential of c-Si is controlled by the shallow Cat-doping and that the surface recombination velocity of minority carriers in c-Si can be enormously lowered by thismore » potential control.« less
Authors:
; ; ; ; ; ; ;  [1]
  1. Japan Advanced Institute of Science and Technology (JAIST), Asahidai, Nomi-shi, Ishikawa-ken 923-1292 (Japan)
Publication Date:
OSTI Identifier:
22305684
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 11; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BORANES; BORON ADDITIONS; BORON HYDRIDES; CARRIERS; CATALYTIC CRACKING; CONCENTRATION RATIO; DEPTH; DOPED MATERIALS; ELECTRICAL PROPERTIES; LAYERS; MASS SPECTROSCOPY; PHOSPHINES; PHOSPHORUS ADDITIONS; PHOSPHORUS HYDRIDES; RECOMBINATION; SILICON; SPATIAL DISTRIBUTION; SURFACE POTENTIAL; SURFACES; TUNGSTEN