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Title: Using an ultra-thin non-doped orange emission layer to realize high efficiency white organic light-emitting diodes with low efficiency roll-off

By adopting an ultra-thin non-doped orange emission layer sandwiched between two blue emission layers, high efficiency white organic light-emitting diodes (WOLEDs) with reduced efficiency roll-off were fabricated. The optimized devices show a balanced white emission with Internationale de L'Eclairage of (0.41, 0.44) at the luminance of 1000 cd/m{sup 2}, and the maximum power efficiency, current efficiency (CE), and external quantum efficiency reach 63.2 lm/W, 59.3 cd/A, and 23.1%, which slightly shift to 53.4 lm/W, 57.1 cd/A, and 22.2% at 1000 cd/m{sup 2}, respectively, showing low efficiency roll-off. Detailed investigations on the recombination zone and the transient electroluminescence (EL) clearly reveal the EL processes of the ultra-thin non-doped orange emission layer in WOLEDs.
Authors:
; ;  [1] ;  [2] ;  [3]
  1. State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Graduate University of the Chinese Academy of Sciences, Changchun 130022 (China)
  2. Luminous Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore)
  3. Department of Materials Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023 (China)
Publication Date:
OSTI Identifier:
22304503
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 24; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CURRENTS; DOPED MATERIALS; ELECTROLUMINESCENCE; EQUIPMENT; LAYERS; LIGHT EMITTING DIODES; ORGANIC SEMICONDUCTORS; QUANTUM EFFICIENCY; RECOMBINATION; THIN FILMS; TRANSIENTS