skip to main content

Title: Multi-scale quantum point contact model for filamentary conduction in resistive random access memories devices

We depart from first-principle simulations of electron transport along paths of oxygen vacancies in HfO{sub 2} to reformulate the Quantum Point Contact (QPC) model in terms of a bundle of such vacancy paths. By doing this, the number of model parameters is reduced and a much clearer link between the microscopic structure of the conductive filament (CF) and its electrical properties can be provided. The new multi-scale QPC model is applied to two different HfO{sub 2}-based devices operated in the unipolar and bipolar resistive switching (RS) modes. Extraction of the QPC model parameters from a statistically significant number of CFs allows revealing significant structural differences in the CF of these two types of devices and RS modes.
Authors:
; ; ;  [1] ;  [2] ;  [3] ; ;  [4]
  1. Departament d'Enginyeria Electrònica, Universitat Autònoma de Barcelona, 08193 Bellaterra (Spain)
  2. CEA-LETI, MINATEC, Grenoble (France)
  3. Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus de Bellaterra, 08193 Bellaterra (Spain)
  4. Laboratory of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 (China)
Publication Date:
OSTI Identifier:
22304501
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 24; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COMPUTERIZED SIMULATION; ELECTRIC CONTACTS; ELECTRICAL PROPERTIES; ELECTRONS; EXTRACTION; FILAMENTS; HAFNIUM OXIDES; MEMORY DEVICES; OXYGEN; RANDOMNESS