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Title: Quantifying coherent and incoherent cathodoluminescence in semiconductors and metals

We present a method to separate coherent and incoherent contributions to cathodoluminescence from bulk materials by using angle-resolved cathodoluminescence spectroscopy. Using 5 and 30‚ÄČkeV electrons, we measure the cathodoluminescence spectra for Si, GaAs, Al, Ag, Au, and Cu and determine the angular emission distributions for Al, GaAs, and Si. Aluminium shows a clear dipolar radiation profile due to coherent transition radiation, while GaAs shows incoherent luminescence characterized by a Lambertian angular distribution. Silicon shows both transition radiation and incoherent radiation. From the angular data, we determine the ratio between the two processes and decompose their spectra. This method provides a powerful way to separate different radiative cathodoluminescence processes, which is useful for material characterization and in studies of electron- and light-matter interaction in metals and semiconductors.
Authors:
; ;  [1]
  1. Center for Nanophotonics, FOM Institute AMOLF, Science Park 104, 1098 XG Amsterdam (Netherlands)
Publication Date:
OSTI Identifier:
22304500
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 24; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM; ANGULAR DISTRIBUTION; CATHODOLUMINESCENCE; COPPER; ELECTRONS; GALLIUM ARSENIDES; GOLD; INTERACTIONS; KEV RANGE; SEMICONDUCTOR MATERIALS; SILICON; SILVER; SPECTRA; SPECTROSCOPY; TRANSITION RADIATION; VISIBLE RADIATION