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Title: Epitaxial ferromagnetic oxide thin films on silicon with atomically sharp interfaces

A bottleneck in the integration of functional oxides with silicon, either directly grown or using a buffer, is the usual formation of an amorphous interfacial layer. Here, we demonstrate that ferromagnetic CoFe{sub 2}O{sub 4} films can be grown epitaxially on Si(111) using a Y{sub 2}O{sub 3} buffer layer, and remarkably the Y{sub 2}O{sub 3}/Si(111) interface is stable and remains atomically sharp. CoFe{sub 2}O{sub 4} films present high crystal quality and high saturation magnetization.
Authors:
 [1] ;  [2] ; ; ;  [1] ;  [3] ;  [4] ; ; ;  [5]
  1. Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus de la UAB, 08193 Bellaterra, Barcelona (Spain)
  2. (France)
  3. CEMES-CNRS, 29 rue Jeanne Marvig, BP 94347, Toulouse Cedex 4 (France)
  4. Institució Catalana de Recerca i Estudis Avançats (ICREA), Barcelona, Spain and Dep. de Física, Univ. Autònoma de Barcelona, 08193 Bellaterra (Spain)
  5. IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany)
Publication Date:
OSTI Identifier:
22304472
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BUFFERS; COBALT COMPOUNDS; COBALT OXIDES; CRYSTALS; EPITAXY; FERRITES; INTERFACES; LAYERS; MAGNETIZATION; SATURATION; SILICON; THIN FILMS; YTTRIUM OXIDES