skip to main content

SciTech ConnectSciTech Connect

Title: Hydrogenation of the Cu{sub PL} center in silicon

The Cu{sub PL} center, a complex of four copper atoms in silicon with the zero-phonon photoluminescence line at 1014 meV and the donor level at 0.1 eV above the top of the valence band, is studied in the process of hydrogenation at 380 K. Complexes of a substitutional copper atom (Cu{sub s}) with one and two hydrogen atoms are observed to form in the hydrogenated region at the expense of Cu{sub PL}, while no isolated Cu{sub s} atoms are detected. Our results indicate that the addition of a single hydrogen atom induces the dissociation of all interstitial Cu atoms which decorate the Cu{sub s} core of the Cu{sub PL} center.
Authors:
 [1] ;  [2]
  1. Institute of Microelectronics Technology RAS, 142432 Chernogolovka (Russian Federation)
  2. Technische Universität Dresden, 01062 Dresden (Germany)
Publication Date:
OSTI Identifier:
22304470
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ATOMS; COPPER; COPPER COMPOUNDS; DISSOCIATION; EV RANGE; HYDROGEN; HYDROGEN COMPLEXES; HYDROGENATION; PHONONS; PHOTOLUMINESCENCE; SILICON; VALENCE