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Title: Formation and photoluminescence of GaAs{sub 1−x}N{sub x} dilute nitride achieved by N-implantation and flash lamp annealing

In this paper, we present the fabrication of dilute nitride semiconductor GaAs{sub 1−x}N{sub x} by nitrogen-ion-implantation and flash lamp annealing (FLA). N was implanted into the GaAs wafers with atomic concentration of about x{sub imp1} = 0.38% and x{sub imp2} = 0.76%. The GaAs{sub 1−x}N{sub x} layer is regrown on GaAs during FLA treatment in a solid phase epitaxy process. Room temperature near band-edge photoluminescence (PL) has been observed from the FLA treated GaAs{sub 1−x}N{sub x} samples. According to the redshift of the near band-edge PL peak, up to 80% and 44% of the implanted N atoms have been incorporated into the lattice by FLA for x{sub imp1} = 0.38% and x{sub imp2} = 0.76%, respectively. Our investigation shows that ion implantation followed by ultrashort flash lamp treatment, which allows for large scale production, exhibits a promising prospect on bandgap engineering of GaAs based semiconductors.
Authors:
;  [1] ;  [2] ; ; ;  [1]
  1. Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Institute of Ion Beam Physics and Materials Research, P.O. Box 510119, 01314 Dresden (Germany)
  2. (Germany)
Publication Date:
OSTI Identifier:
22304468
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; ATOMS; CONCENTRATION RATIO; EPITAXY; FABRICATION; GALLIUM ARSENIDES; ION IMPLANTATION; LAYERS; NITROGEN IONS; PHOTOLUMINESCENCE; RED SHIFT; SEMICONDUCTOR MATERIALS; SOLIDS; TEMPERATURE RANGE 0273-0400 K