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Title: Insulating state to quantum Hall-like state transition in a spin-orbit-coupled two-dimensional electron system

We study interference and interactions in an InAs/InAsSb two-dimensional electron system. In such a system, spin-orbit interactions are shown to be strong, which result in weak antilocalization (WAL) and thereby positive magnetoresistance around zero magnetic field. After suppressing WAL by the magnetic field, we demonstrate that classical positive magnetoresistance due to spin-orbit coupling plays a role. With further increasing the magnetic field, the system undergoes a direct insulator-quantum Hall transition. By analyzing the magnetotransport behavior in different field regions, we show that both electron-electron interactions and spin-related effects are essential in understanding the observed direct transition.
Authors:
;  [1] ; ; ;  [2] ; ; ;  [3] ;  [1] ;  [4]
  1. Graduate Institute of Applied Physics, National Taiwan University, Taipei 10617, Taiwan (China)
  2. Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan (China)
  3. Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China)
  4. (China)
Publication Date:
OSTI Identifier:
22304467
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANTIMONY COMPOUNDS; ELECTRON-ELECTRON INTERACTIONS; INDIUM ARSENIDES; INTERFERENCE; L-S COUPLING; MAGNETIC FIELDS; MAGNETORESISTANCE; ORBITS; SPIN