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Title: Electrical properties and electronic structure of Si-implanted hexagonal boron nitride films

Si ion implantation with a set of ion energies and ion doses was carried out to dope hexagonal boron nitride (hBN) thin films synthesized by radio-frequency magnetron sputtering. Hall effect measurements revealed n-type conduction with a low resistivity of 0.5 Ω cm at room temperature, corresponding to an electron concentration of 2.0 × 10{sup 19} cm{sup −3} and a mobility of 0.6 cm{sup 2}/V s. Temperature-dependent resistivity measurements in a wide temperature range from 50 to 800 K demonstrated two shallow donor levels in the hBN band gap induced by Si doping, which was in consistence with the theoretical calculation by density function theory.
Authors:
; ;  [1] ;  [2]
  1. Center of Super-Diamond and Advanced Films (COSDAF), and Department of Physics and Materials Science, City University of Hong Kong (Hong Kong)
  2. School of Physics and Electronic Science, Changsha University of Science and Technology, Changsha 410114 (China)
Publication Date:
OSTI Identifier:
22304466
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BORON NITRIDES; CARRIER MOBILITY; COMPUTERIZED SIMULATION; DENSITY; DENSITY FUNCTIONAL METHOD; ELECTRICAL PROPERTIES; ELECTRONIC STRUCTURE; ELECTRONS; HALL EFFECT; ION IMPLANTATION; MAGNETRONS; RADIOWAVE RADIATION; SILICON IONS; SPUTTERING; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; THIN FILMS