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Title: Continuous ultra-thin MoS{sub 2} films grown by low-temperature physical vapor deposition

Uniform growth of pristine two dimensional (2D) materials over large areas at lower temperatures without sacrifice of their unique physical properties is a critical pre-requisite for seamless integration of next-generation van der Waals heterostructures into functional devices. This Letter describes a vapor phase growth technique for precisely controlled synthesis of continuous, uniform molecular layers of MoS{sub 2} on silicon dioxide and highly oriented pyrolitic graphite substrates of over several square centimeters at 350 °C. Synthesis of few-layer MoS{sub 2} in this ultra-high vacuum physical vapor deposition process yields materials with key optical and electronic properties identical to exfoliated layers. The films are composed of nano-scale domains with strong chemical binding between domain boundaries, allowing lift-off from the substrate and electronic transport measurements from contacts with separation on the order of centimeters.
Authors:
 [1] ;  [2] ; ; ;  [3] ;  [2] ; ;  [4] ; ; ; ;  [3]
  1. Department of Chemical and Materials Engineering, University of Dayton, Dayton, Ohio 45469 (United States)
  2. (United States)
  3. Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433 (United States)
  4. Department of Mechanical and Nuclear Engineering, Pennsylvania State University, College Park, Pennsylvania 16802 (United States)
Publication Date:
OSTI Identifier:
22304462
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 26; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CRYSTAL GROWTH; EQUIPMENT; FILMS; GRAPHITE; LAYERS; MOLYBDENUM SULFIDES; PHYSICAL PROPERTIES; PHYSICAL VAPOR DEPOSITION; SILICON OXIDES; SUBSTRATES; SYNTHESIS; TEMPERATURE RANGE 0400-1000 K; VAN DER WAALS FORCES