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Title: Phonon-assisted transient electroluminescence in Si

The phonon-replica infrared emission is observed at room temperature from indirect band gap Si light-emitting diode under forward bias. With increasing injection current density, the broadened electroluminescence spectrum and band gap reduction are observed due to joule heating. The spectral-resolved temporal response of electroluminescence reveals the competitiveness between single (TO) and dual (TO + TA) phonon-assisted indirect band gap transitions. As compared to infrared emission with TO phonon-replica, the retarder of radiative recombination at long wavelength region (∼1.2 μm) indicates lower transition probability of dual phonon-replica before thermal equivalent.
Authors:
 [1] ;  [2] ;  [3] ;  [4]
  1. Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan (China)
  2. Institute of Biomedical Engineering, National Taiwan University, Taipei, Taiwan and Department of Laboratory Medicine, National Taiwan University Hospital, Taipei, Taiwan (China)
  3. Institute of Biomedical Engineering, National Taiwan University, Taipei, Taiwan (China)
  4. Institute of Biomedical Engineering and Institute of Electrical Engineering, National Taiwan University, Taipei, Taiwan (China)
Publication Date:
OSTI Identifier:
22304458
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 26; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CURRENT DENSITY; ELECTROLUMINESCENCE; INFRARED RADIATION; INJECTION; JOULE HEATING; LIGHT EMITTING DIODES; PHONONS; PROBABILITY; RECOMBINATION; REDUCTION; SILICON; SPECTRA; TEMPERATURE RANGE 0273-0400 K; TRANSIENTS; WAVELENGTHS