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Title: Ultrahigh sensitive sub-terahertz detection by InP-based asymmetric dual-grating-gate high-electron-mobility transistors and their broadband characteristics

We report on room-temperature plasmonic detection of sub-terahertz radiation by InAlAs/InGaAs/InP high electron mobility transistors with an asymmetric dual-grating-gate structure. Maximum responsivities of 22.7 kV/W at 200 GHz and 21.5 kV/W at 292 GHz were achieved under unbiased drain-to-source condition. The minimum noise equivalent power was estimated to be 0.48 pW/Hz{sup 0.5} at 200 GHz at room temperature, which is the record-breaking value ever reported for plasmonic THz detectors. Frequency dependence of the responsivity in the frequency range of 0.2–2 THz is in good agreement with the theory.
Authors:
; ; ; ; ;  [1] ;  [2] ; ;  [3] ;  [4] ;  [5]
  1. Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)
  2. Institut d'Electronique, de Microélectronique et de Nanotechnologie, 59562 Villeneuve d'Ascq Cedex (France)
  3. Laboratoire Charles Coulomb, UMR 5221, Université Montpellier 2 - CNRS, F-34095 Montpellier (France)
  4. Departamento de Fisica Aplicada, Universidad de Salamanca, Salamanca 37008 (Spain)
  5. Kotelnikov Institute of Radio Engineering and Electronics, 410019 Saratov (Russian Federation)
Publication Date:
OSTI Identifier:
22304448
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 25; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ASYMMETRY; DETECTION; ELECTRON MOBILITY; FREQUENCY DEPENDENCE; GALLIUM ARSENIDES; GALLIUM COMPOUNDS; INDIUM ARSENIDES; INDIUM COMPOUNDS; INDIUM PHOSPHIDES; PHOSPHORUS COMPOUNDS; PLASMONS; SIMULATION; TEMPERATURE RANGE 0273-0400 K; THZ RANGE; TRANSISTORS