Phase coherent transport in hollow InAs nanowires

Journal Article · Mon Sep 15 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4896286· OSTI ID:22304434

Wenz, T.; Rosien, M.; Haas, F.; Rieger, T.; Lepsa, M. I.; Lüth, H.; Grützmacher, D.; Demarina, N. ^[1]

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1. Peter Grünberg Institute (PGI-2) and JARA-Fundamentals of Future Information Technology, Forschungszentrum Jülich GmbH, 52425 Jülich (Germany)

Hollow InAs nanowires are produced from GaAs/InAs core/shell nanowires by wet chemical etching of the GaAs core. At room temperature, the resistivity of several nanowires is measured before and after removal of the GaAs core. The observed change in resistivity is explained by simulating the electronic states in both structures. At cryogenic temperatures, quantum transport in hollow InAs nanowires is studied. Flux periodic conductance oscillations are observed when the magnetic field is oriented parallel to the nanowire axis.

• OSTI ID: 22304434
• Journal Information: Applied Physics Letters, Vol. 105, Issue 11; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ETCHING
GALLIUM ARSENIDES
INDIUM ARSENIDES
MAGNETIC FIELDS
NANOWIRES
OSCILLATIONS
PERIODICITY
QUANTUM WIRES
TEMPERATURE RANGE 0273-0400 K