skip to main content

Title: Phase coherent transport in hollow InAs nanowires

Hollow InAs nanowires are produced from GaAs/InAs core/shell nanowires by wet chemical etching of the GaAs core. At room temperature, the resistivity of several nanowires is measured before and after removal of the GaAs core. The observed change in resistivity is explained by simulating the electronic states in both structures. At cryogenic temperatures, quantum transport in hollow InAs nanowires is studied. Flux periodic conductance oscillations are observed when the magnetic field is oriented parallel to the nanowire axis.
Authors:
; ; ; ; ; ; ;  [1] ;  [2]
  1. Peter Grünberg Institute (PGI-9) and JARA-Fundamentals of Future Information Technology, Forschungszentrum Jülich GmbH, 52425 Jülich (Germany)
  2. Peter Grünberg Institute (PGI-2) and JARA-Fundamentals of Future Information Technology, Forschungszentrum Jülich GmbH, 52425 Jülich (Germany)
Publication Date:
OSTI Identifier:
22304434
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 11; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ETCHING; GALLIUM ARSENIDES; INDIUM ARSENIDES; MAGNETIC FIELDS; NANOWIRES; OSCILLATIONS; PERIODICITY; QUANTUM WIRES; TEMPERATURE RANGE 0273-0400 K