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Title: Fabrication and characterization of p-channel Si double quantum dots

Lithographically defined p-channel Si single hole transistors (SHTs) and double quantum dot (DQD) devices are fabricated and characterized. Coulomb oscillations are clearly evident at a temperature of 4.2‚ÄČK. The charging energy and the diameter of the SHT are estimated from the Coulomb diamonds. Honeycomb-like charge stability diagrams are observed from measurements of the DQD devices. Single hole transitions through the DQD are detected using an integrated SHT as a charge sensor, and a few-hole regime of the DQD is observed.
Authors:
; ;  [1] ;  [2] ;  [3]
  1. Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8552 (Japan)
  2. Department of Physical Electronics, Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8552 (Japan)
  3. (JST), 4-1-8 Honcho Kawaguchi, Saitama 332-0012 (Japan)
Publication Date:
OSTI Identifier:
22304433
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 11; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; DIAMONDS; EQUIPMENT; FABRICATION; HOLES; NANOELECTRONICS; NANOSTRUCTURES; OSCILLATIONS; QUANTUM DOTS; SENSORS; SILICON; STABILITY; TRANSISTORS