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Title: Novel attributes in modeling and optimizing of the new graphene based In{sub x}Ga{sub 1−x}N Schottky barrier solar cells

Based on the ability of In{sub x}Ga{sub 1−x}N materials to optimally span the solar spectrum and their superior radiation resistance, solar cells based on p-type In{sub x}Ga{sub 1−x}N with low indium contents and interfacing with graphene film (G/In{sub x}Ga{sub 1−x}N), is proposed to exploit the benefit of transparency and work function tunability of graphene. Then, their solar power conversion efficiency modeled and optimized using a new analytical approach taking into account all recombination processes and accurate carrier mobility. Furthermore, their performance was compared with graphene on silicon counterparts and G/p-In{sub x}Ga{sub 1−x}N showed relatively smaller short-circuits current (∼7 mA/cm{sup 2}) and significantly higher open-circuit voltage (∼4 V) and efficiency (∼30%). The thickness, doping concentration, and indium contents of p-In{sub x}Ga{sub 1−x}N and graphene work function were found to substantially affect the performance of G/p-In{sub x}Ga{sub 1−x}N.
Authors:
 [1] ;  [1] ;  [2]
  1. Research Institute for Applied Physics and Astronomy, University of Tabriz, Tabriz 51666-14766 (Iran, Islamic Republic of)
  2. (Australia)
Publication Date:
OSTI Identifier:
22304418
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARRIER MOBILITY; CURRENTS; EFFICIENCY; ELECTRIC POTENTIAL; ELECTRICAL FAULTS; FILMS; GALLIUM COMPOUNDS; GRAPHENE; INDIUM COMPOUNDS; NITROGEN COMPOUNDS; OPACITY; OPTIMIZATION; RECOMBINATION; SCHOTTKY BARRIER SOLAR CELLS; SILICON; SIMULATION; SPECTRA; THICKNESS; WORK FUNCTIONS