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Title: Novel attributes in modeling and optimizing of the new graphene based In{sub x}Ga{sub 1−x}N Schottky barrier solar cells

Abstract

Based on the ability of In{sub x}Ga{sub 1−x}N materials to optimally span the solar spectrum and their superior radiation resistance, solar cells based on p-type In{sub x}Ga{sub 1−x}N with low indium contents and interfacing with graphene film (G/In{sub x}Ga{sub 1−x}N), is proposed to exploit the benefit of transparency and work function tunability of graphene. Then, their solar power conversion efficiency modeled and optimized using a new analytical approach taking into account all recombination processes and accurate carrier mobility. Furthermore, their performance was compared with graphene on silicon counterparts and G/p-In{sub x}Ga{sub 1−x}N showed relatively smaller short-circuits current (∼7 mA/cm{sup 2}) and significantly higher open-circuit voltage (∼4 V) and efficiency (∼30%). The thickness, doping concentration, and indium contents of p-In{sub x}Ga{sub 1−x}N and graphene work function were found to substantially affect the performance of G/p-In{sub x}Ga{sub 1−x}N.

Authors:
 [1];  [1]
  1. Research Institute for Applied Physics and Astronomy, University of Tabriz, Tabriz 51666-14766 (Iran, Islamic Republic of)
Publication Date:
OSTI Identifier:
22304418
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 115; Journal Issue: 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARRIER MOBILITY; CURRENTS; EFFICIENCY; ELECTRIC POTENTIAL; ELECTRICAL FAULTS; FILMS; GALLIUM COMPOUNDS; GRAPHENE; INDIUM COMPOUNDS; NITROGEN COMPOUNDS; OPACITY; OPTIMIZATION; RECOMBINATION; SCHOTTKY BARRIER SOLAR CELLS; SILICON; SIMULATION; SPECTRA; THICKNESS; WORK FUNCTIONS

Citation Formats

Arefinia, Zahra, Asgari, Asghar, and School of Electrical, Electronic, and Computer Engineering, University of Western Australia, Crawley, WA 6009. Novel attributes in modeling and optimizing of the new graphene based In{sub x}Ga{sub 1−x}N Schottky barrier solar cells. United States: N. p., 2014. Web. doi:10.1063/1.4878158.
Arefinia, Zahra, Asgari, Asghar, & School of Electrical, Electronic, and Computer Engineering, University of Western Australia, Crawley, WA 6009. Novel attributes in modeling and optimizing of the new graphene based In{sub x}Ga{sub 1−x}N Schottky barrier solar cells. United States. https://doi.org/10.1063/1.4878158
Arefinia, Zahra, Asgari, Asghar, and School of Electrical, Electronic, and Computer Engineering, University of Western Australia, Crawley, WA 6009. 2014. "Novel attributes in modeling and optimizing of the new graphene based In{sub x}Ga{sub 1−x}N Schottky barrier solar cells". United States. https://doi.org/10.1063/1.4878158.
@article{osti_22304418,
title = {Novel attributes in modeling and optimizing of the new graphene based In{sub x}Ga{sub 1−x}N Schottky barrier solar cells},
author = {Arefinia, Zahra and Asgari, Asghar and School of Electrical, Electronic, and Computer Engineering, University of Western Australia, Crawley, WA 6009},
abstractNote = {Based on the ability of In{sub x}Ga{sub 1−x}N materials to optimally span the solar spectrum and their superior radiation resistance, solar cells based on p-type In{sub x}Ga{sub 1−x}N with low indium contents and interfacing with graphene film (G/In{sub x}Ga{sub 1−x}N), is proposed to exploit the benefit of transparency and work function tunability of graphene. Then, their solar power conversion efficiency modeled and optimized using a new analytical approach taking into account all recombination processes and accurate carrier mobility. Furthermore, their performance was compared with graphene on silicon counterparts and G/p-In{sub x}Ga{sub 1−x}N showed relatively smaller short-circuits current (∼7 mA/cm{sup 2}) and significantly higher open-circuit voltage (∼4 V) and efficiency (∼30%). The thickness, doping concentration, and indium contents of p-In{sub x}Ga{sub 1−x}N and graphene work function were found to substantially affect the performance of G/p-In{sub x}Ga{sub 1−x}N.},
doi = {10.1063/1.4878158},
url = {https://www.osti.gov/biblio/22304418}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 19,
volume = 115,
place = {United States},
year = {Wed May 21 00:00:00 EDT 2014},
month = {Wed May 21 00:00:00 EDT 2014}
}