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Title: Thickness dependent metal-insulator transition and dimensional crossover for weak localization in Si{sub 0.02}Zn{sub 0.98}O thin films grown by pulsed laser deposition

Metal to insulator transition was observed in Si{sub 0.02}Zn{sub 0.98}O (SZO) films, grown by pulsed laser deposition on sapphire substrates, as the thicknesses of the films were reduced from ∼40 to 15 nm. The SZO film with thickness of ∼40 nm showed typical metallic behavior in temperature dependent resistivity measurements. On the contrary, the SZO film with thickness of ∼15 nm was found to exhibit strong localization where the transport at low temperature was dominated by variable range hopping conduction. In the intermediate thickness regime, quantum corrections were important and a dimensional crossover from 3D to 2D weak localization occurred in the SZO film with thickness of 20 nm.
Authors:
; ;  [1]
  1. Laser Material Processing Division, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India)
Publication Date:
OSTI Identifier:
22304413
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CORRECTIONS; ENERGY BEAM DEPOSITION; LASER RADIATION; METALS; OXYGEN COMPOUNDS; PHASE TRANSFORMATIONS; PULSED IRRADIATION; SAPPHIRE; SILICON COMPOUNDS; SUBSTRATES; TEMPERATURE DEPENDENCE; THICKNESS; THIN FILMS; ZINC COMPOUNDS