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Title: Impact of total ionizing dose irradiation on electrical property of ferroelectric-gate field-effect transistor

P-type channel metal-ferroelectric-insulator-silicon field-effect transistors (FETs) with a 300 nm thick SrBi{sub 2}Ta{sub 2}O{sub 9} ferroelectric film and a 10 nm thick HfTaO layer on silicon substrate were fabricated and characterized. The prepared FeFETs were then subjected to {sup 60}Co gamma irradiation in steps of three dose levels. Irradiation-induced degradation on electrical characteristics of the fabricated FeFETs was observed after 1 week annealing at room temperature. The possible irradiation-induced degradation mechanisms were discussed and simulated. All the irradiation experiment results indicated that the stability and reliability of the fabricated FeFETs for nonvolatile memory applications will become uncontrollable under strong irradiation dose and/or long irradiation time.
Authors:
; ; ; ; ; ;  [1] ;  [2] ;  [1] ;  [3] ; ;  [4]
  1. Key Laboratory for Low Dimensional Materials and Application Technology of Ministry of Education (Xiangtan University), Xiangtan, Hunan 411105 (China)
  2. The School of Mathematics and Computational Science, Xiangtan University, Xiangtan, Hunan 411105 (China)
  3. (United States)
  4. Northwest Institute of Nuclear Technology, Xi'an, Shanxi 710024 (China)
Publication Date:
OSTI Identifier:
22304378
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; BISMUTH COMPOUNDS; COBALT 60; ELECTRICAL PROPERTIES; FERROELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; FILMS; GAMMA RADIATION; LAYERS; OXYGEN COMPOUNDS; PHYSICAL RADIATION EFFECTS; RADIATION DOSES; SILICON; SIMULATION; STABILITY; STRONTIUM COMPOUNDS; SUBSTRATES; TANTALUM