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Title: Shockwave generation by a semiconductor bridge operation in water

A semiconductor bridge (SCB) is a silicon device, used in explosive systems as the electrical initiator element. In recent years, SCB plasma has been extensively studied, both electrically and using fast photography and spectroscopic imaging. However, the value of the pressure buildup at the bridge remains unknown. In this study, we operated SCB devices in water and, using shadow imaging and reference beam interferometry, obtained the velocity of the shock wave propagation and distribution of the density of water. These results, together with a self-similar hydrodynamic model, were used to calculate the pressure generated by the exploding SCB. In addition, the results obtained showed that the energy of the water flow exceeds significantly the energy deposited into the exploded SCB. The latter can be explained by the combustion of the aluminum and silicon atoms released in water, which acts as an oxidizing medium.
Authors:
; ; ;  [1]
  1. Physics Department, Technion, Haifa 32000 (Israel)
Publication Date:
OSTI Identifier:
22304367
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM; COMBUSTION; DENSITY; DISTRIBUTION; EQUIPMENT; EXPLOSIVES; HYDRODYNAMIC MODEL; INTERFEROMETRY; OPERATION; PHOTOGRAPHY; PLASMA; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SHOCK WAVES; SILICON; SILICON DIODES; WATER