Novel signal inversion of laser beam induced current for femtosecond-laser-drilling-induced junction on vacancy-doped p-type HgCdTe

Journal Article · Wed May 28 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4879316· OSTI ID:22304355

Qiu, W. C.; Wang, R.; Xu, Z. J.; Jiang, T. ^[1]

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1. College of Photoelectric Science and Engineering, National University of Defense Technology, Changsha, Hunan 410073 (China)

In this paper, experimental results of temperature-dependent signal inversion of laser beam induced current (LBIC) for femtosecond-laser-drilling-induced junction on vacancy-doped p-type HgCdTe are reported. LBIC characterization shows that the traps induced by femtosecond laser drilling are sensitive to temperature. Theoretical models for trap-related p-n junction transformation are proposed and demonstrated using numerical simulations. The simulations are in good agreement with the experimental results. The effects of traps and mixed conduction are possibly the main reasons that result in the novel signal inversion of LBIC microscope at room temperature. The research results provide a theoretical guide for practical applications of large-scale array HgCdTe infrared photovoltaic detectors formed by femtosecond laser drilling, which may act as a potential new method for fabricating HgCdTe photodiodes.

• OSTI ID: 22304355
• Journal Information: Journal of Applied Physics, Vol. 115, Issue 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CADMIUM ALLOYS
COMPUTERIZED SIMULATION
CURRENTS
DOPED MATERIALS
LASER DRILLING
LASER RADIATION
MERCURY ALLOYS
MICROSCOPES
PHOTODIODES
PHOTOVOLTAIC EFFECT
P-N JUNCTIONS
P-TYPE CONDUCTORS
TELLURIUM ALLOYS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
TRANSFORMATIONS
VACANCIES