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Title: Novel signal inversion of laser beam induced current for femtosecond-laser-drilling-induced junction on vacancy-doped p-type HgCdTe

In this paper, experimental results of temperature-dependent signal inversion of laser beam induced current (LBIC) for femtosecond-laser-drilling-induced junction on vacancy-doped p-type HgCdTe are reported. LBIC characterization shows that the traps induced by femtosecond laser drilling are sensitive to temperature. Theoretical models for trap-related p-n junction transformation are proposed and demonstrated using numerical simulations. The simulations are in good agreement with the experimental results. The effects of traps and mixed conduction are possibly the main reasons that result in the novel signal inversion of LBIC microscope at room temperature. The research results provide a theoretical guide for practical applications of large-scale array HgCdTe infrared photovoltaic detectors formed by femtosecond laser drilling, which may act as a potential new method for fabricating HgCdTe photodiodes.
Authors:
; ; ;  [1] ;  [1] ;  [2] ;  [2]
  1. College of Photoelectric Science and Engineering, National University of Defense Technology, Changsha, Hunan 410073 (China)
  2. (China)
Publication Date:
OSTI Identifier:
22304355
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CADMIUM ALLOYS; COMPUTERIZED SIMULATION; CURRENTS; DOPED MATERIALS; LASER DRILLING; LASER RADIATION; MERCURY ALLOYS; MICROSCOPES; PHOTODIODES; PHOTOVOLTAIC EFFECT; P-N JUNCTIONS; P-TYPE CONDUCTORS; TELLURIUM ALLOYS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; TRANSFORMATIONS; VACANCIES