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Title: Charge noise analysis of metal oxide semiconductor dual-gate Si/SiGe quantum point contacts

The frequency dependence of conductance noise through a gate-defined quantum point contact fabricated on a Si/SiGe modulation doped wafer is characterized. The 1/f{sup 2} noise, which is characteristic of random telegraph noise, is reduced by application of a negative bias on the global top gate to reduce the local gate voltage. Direct leakage from the large global gate voltage also causes random telegraph noise, and therefore, there is a suitable point to operate quantum dot measurement.
Authors:
;  [1] ;  [1] ;  [2] ;  [3] ; ;  [4] ;  [4] ;  [5]
  1. Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1-S9-11, Ookayama, Meguro-ku, Tokyo, 152-8552 (Japan)
  2. (Japan)
  3. (JST), 4-1-8 Honcho, Kawaguchi, Saitama 332-0012 (Japan)
  4. Department of Applied Physics, School of Engineering, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)
  5. (CEMS), 2-1, Hirosawa, Wako, Saitama 351-0198 (Japan)
Publication Date:
OSTI Identifier:
22304351
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRIC CONTACTS; FREQUENCY DEPENDENCE; GERMANIUM ALLOYS; GERMANIUM SILICIDES; MODULATION; MOS TRANSISTORS; NOISE; OXIDES; QUANTUM DOTS; RANDOMNESS; SEMICONDUCTOR MATERIALS; SILICON; SILICON ALLOYS