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Title: Metallic filament formation by aligned oxygen vacancies in ZnO-based resistive switches

The electronic structure of ZnO with defects of oxygen vacancies were investigated by using first-principles methods. Some structure models were constructed in order to investigate the effects of the distribution of oxygen vacancies on the electronic properties of ZnO. By analyzing the calculated results, we found that only the aligned oxygen vacancies can form the conducting channel in ZnO, and the transformation of the oxygen vacancy from charged state to neutral state is consistent with the energetics rule of the forming aligned oxygen vacancies. As for the heterojunction of Pt/ZnO/Pt, the oxygen vacancies near the interface of Pt/ZnO depress the local Schottky barrier effectively, and the aligned oxygen vacancies in ZnO form a conducting filament connecting two Pt electrodes. The metallic filament formation in Pt/ZnO/Pt resistive switching cells should be closely related to the carrier injection from Pt electrode into ZnO and the arrangement of oxygen vacancies in ZnO slab.
Authors:
 [1]
  1. School of Electrical Engineering, Shandong University, Jinan 250061 (China)
Publication Date:
OSTI Identifier:
22304349
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARRIERS; COMPUTERIZED SIMULATION; CRYSTAL DEFECTS; DIFFUSION BARRIERS; DISTRIBUTION; ELECTRIC CONDUCTIVITY; ELECTRODES; ELECTRONIC STRUCTURE; FILAMENTS; HETEROJUNCTIONS; INJECTION; INTERFACES; OXYGEN; PLATINUM; SWITCHES; VACANCIES; ZINC OXIDES