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Title: Investigations of stochastic resonance in two-terminal device with vanadium dioxide film

The results of stochastic resonance investigation in a nonlinear system, consisting of a microstructure with a polycrystalline vanadium dioxide (VO{sub 2}) film grown on sapphire and resistor in series are reported. Nonlinearity of the system was provided due to insulator-metal phase transition in VO{sub 2}. In the stochastic resonance regime at 100 Hz signal frequency, the transition coefficient of signal-to-noise ratio reached 87 in contrast to 250 for microstructures with VO{sub 2} films grown on silica in our previous investigations. The measured characteristics of microstructures with VO{sub 2} films grown on silica and sapphire substrates were found to be qualitatively similar. For both substrates, a stochastic resonance was observed at threshold switching voltage from insulating to metallic state of VO{sub 2}. For sapphire substrate the output signal-to-noise ratio rose at higher signal frequencies. The stochastic resonance phenomenon in VO{sub 2} films is explained in terms of the monostable damped oscillator model.
Authors:
; ;  [1]
  1. Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, 13 Lavrentyev aven., Novosibirsk 630090 (Russian Federation)
Publication Date:
OSTI Identifier:
22304326
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ELECTRIC POTENTIAL; EQUIPMENT; FILMS; METALS; MICROSTRUCTURE; NONLINEAR PROBLEMS; OSCILLATORS; PHASE TRANSFORMATIONS; POLYCRYSTALS; RESISTORS; RESONANCE; SAPPHIRE; SIGNAL-TO-NOISE RATIO; SILICA; STOCHASTIC PROCESSES; SUBSTRATES; VANADIUM OXIDES