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Title: Ultra-thin GaAs single-junction solar cells integrated with a reflective back scattering layer

This paper reports the proposal, design, and demonstration of ultra-thin GaAs single-junction solar cells integrated with a reflective back scattering layer to optimize light management and minimize non-radiative recombination. According to our recently developed semi-analytical model, this design offers one of the highest potential achievable efficiencies for GaAs solar cells possessing typical non-radiative recombination rates found among commercially available III-V arsenide and phosphide materials. The structure of the demonstrated solar cells consists of an In{sub 0.49}Ga{sub 0.51}P/GaAs/In{sub 0.49}Ga{sub 0.51}P double-heterostructure PN junction with an ultra-thin 300 nm thick GaAs absorber, combined with a 5 μm thick Al{sub 0.52}In{sub 0.48}P layer with a textured as-grown surface coated with Au used as a reflective back scattering layer. The final devices were fabricated using a substrate-removal and flip-chip bonding process. Solar cells with a top metal contact coverage of 9.7%, and a MgF{sub 2}/ZnS anti-reflective coating demonstrated open-circuit voltages (V{sub oc}) up to 1.00 V, short-circuit current densities (J{sub sc}) up to 24.5 mA/cm{sup 2}, and power conversion efficiencies up to 19.1%; demonstrating the feasibility of this design approach. If a commonly used 2% metal grid coverage is assumed, the anticipated J{sub sc} and conversion efficiency of these devices are expected to reach 26.6 mA/cm{sup 2} and 20.7%,more » respectively.« less
Authors:
; ; ; ; ;  [1] ; ;  [2]
  1. Center for Photonics Innovation and School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287 (United States)
  2. Sumika Electronic Materials, Inc., Phoenix, Arizona 85034 (United States)
Publication Date:
OSTI Identifier:
22304315
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BACKSCATTERING; CONNECTORS; CONVERSION; CURRENT DENSITY; ELECTRIC CONTACTS; ELECTRICAL FAULTS; GALLIUM ARSENIDES; GALLIUM PHOSPHIDES; HETEROJUNCTIONS; INDIUM COMPOUNDS; LAYERS; MAGNESIUM FLUORIDES; METALS; RECOMBINATION; SEMICONDUCTOR JUNCTIONS; SOLAR CELLS; SUBSTRATES; SUPERCONDUCTING JUNCTIONS; SURFACES; ZINC SULFIDES