skip to main content

Title: Negative differential resistance and resistance switching behaviors in BaTiO{sub 3} thin films

The polycrystalline BaTiO{sub 3} (BTO) thin films were grown on F-doped SnO{sub 2} substrates by pulsed laser deposition. The devices show a rectification at a small voltage, while bipolar resistive switching (RS) and negative differential resistance (NDR) appear at a large voltage. Furthermore, RS remains and NDR disappears when no positive bias is applied, while both RS and NDR behaviors improve when increasing the positive bias. The electrons trapped/detrapped by interface states at Au/BTO interface are proposed to understand the above behaviors.
Authors:
; ; ;  [1] ;  [2]
  1. Key Laboratory of Photovoltaic Materials of Henan Province and School of Physics and Electronics, Henan University, Kaifeng 475004 (China)
  2. Key Laboratory of Semiconductor Materials, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)
Publication Date:
OSTI Identifier:
22304284
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BARIUM COMPOUNDS; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ENERGY BEAM DEPOSITION; FLUORINE ADDITIONS; INTERFACES; LASER RADIATION; POLYCRYSTALS; PULSED IRRADIATION; SUBSTRATES; THIN FILMS; TIN OXIDES; TITANATES; TRAPPING