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Title: Reassessment of the recombination parameters of chromium in n- and p-type crystalline silicon and chromium-boron pairs in p-type crystalline silicon

Injection-dependent lifetime spectroscopy of both n- and p-type, Cr-doped silicon wafers with different doping levels is used to determine the defect parameters of Cr{sub i} and CrB pairs, by simultaneously fitting the measured lifetimes with the Shockley-Read-Hall model. A combined analysis of the two defects with the lifetime data measured on both n- and p-type samples enables a significant tightening of the uncertainty ranges of the parameters. The capture cross section ratios k = σ{sub n}/σ{sub p} of Cr{sub i} and CrB are determined as 3.2 (−0.6, +0) and 5.8 (−3.4, +0.6), respectively. Courtesy of a direct experimental comparison of the recombination activity of chromium in n- and p-type silicon, and as also suggested by modelling results, we conclude that chromium has a greater negative impact on carrier lifetimes in p-type silicon than n-type silicon with similar doping levels.
Authors:
; ;  [1]
  1. Research School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra ACT 0200 (Australia)
Publication Date:
OSTI Identifier:
22304261
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 21; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BORON; BORON ADDITIONS; CAPTURE; CARRIER LIFETIME; CHEMICAL BONDS; CHROMIUM ADDITIONS; CHROMIUM BORIDES; COMPARATIVE EVALUATIONS; CROSS SECTIONS; DEFECTS; DOPED MATERIALS; HIGH ROOMS; INJECTION; RECOMBINATION; SILICON; SIMULATION; SPECTROSCOPY