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Title: Improvement of the quality of graphene-capped InAs/GaAs quantum dots

In this paper, we study the transfer of graphene onto InAs/GaAs quantum dots (QDs). The graphene is first grown on Cu foils by chemical vapor deposition and then polymer Polymethyl Methacrylate (PMMA) is deposited on the top of graphene/Cu. High quality graphene sheet has been obtained by lowering the dissolving rate of PMMA using vapor processing. Uncapped as well as capped graphene InAs/GaAs QDs have been studied using optical microscopy, scanning electron microscopy, and Raman spectroscopy. We gather from this that the average shifts Δω of QDs Raman peaks are reduced compared to those previously observed in graphene and GaAs capped QDs. The encapsulation by graphene makes the indium atomic concentration intact in the QDs by the reduction of the strain effect of graphene on QDs and the migration of In atoms towards the surface. This gives us a new hetero-structure graphene–InAs/GaAs QDs wherein the graphene plays a key role as a cap layer.
Authors:
; ; ;  [1] ; ;  [2] ; ;  [3]
  1. Faculté des Sciences de Tunis, Université de Tunis El Manar, Campus, 2092 El Manar Tunis (Tunisia)
  2. CNRS/LPN, Route de Nozay, F-91460 Marcoussis (France)
  3. Laboratoire de Génie Electrique de Paris, 11, rue Joliot Curie Plateau de Moulon, 91192 Gif sur Yvette (France)
Publication Date:
OSTI Identifier:
22304223
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 21; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ATOMS; CHEMICAL VAPOR DEPOSITION; COPPER; ENCAPSULATION; FOILS; GALLIUM ARSENIDES; GRAPHENE; INDIUM ARSENIDES; LAYERS; MIGRATION; OPTICAL MICROSCOPY; PMMA; QUANTUM DOTS; RAMAN SPECTROSCOPY; REDUCTION; SCANNING ELECTRON MICROSCOPY; STRAINS; SUBSTRATES; SURFACES