Phase transitions in [001]-oriented morphotropic PbZr{sub 0.52}Ti{sub 0.48}O{sub 3} thin film deposited onto SrTiO{sub 3}-buffered Si substrate

Journal Article · Sat Jun 07 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4881818· OSTI ID:22304220

Shi, Yin ^[1]; Cueff, M.; Le Rhun, G.; Defay, E. ^[1]; Niu, Gang; Vilquin, B.; Saint Girons, G.; Bachelet, R.; Gautier, B.; Robach, Y. ^[2]; Gemeiner, P.; Guiblin, N.; Dkhil, B. ^[3]

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1. CEA, LETI, Minatec Campus, 17 Rue des Martyrs, 38054 Grenoble (France)
2. Universite de Lyon, Institut des Nanotechnologies de Lyon (UMR5270/CNRS), Ecole Centrale de Lyon, 36 avenue Guy de Collongue, F-69134 Ecully cedex (France)
3. Laboratoire Structures, Propriétés et Modélisation des Solides (SPMS), Ecole Centrale Paris, CNRS-UMR8580, F-92290 Châtenay-Malabry (France)

An 85 nm-thick morphotropic PbZr{sub 0.52}Ti{sub 0.48}O{sub 3} (PZT) film grown epitaxially and [001]-oriented onto a SrTiO{sub 3}-buffered Si-wafer is investigated using temperature dependent X-ray diffraction. Two phase transitions, at T{sub rt} ∼ 500 K and T{sub c} ∼ 685 K, are evidenced and are attributed to structural phase transitions from monoclinic-like to tetragonal-like phase and from tetragonal to paraelectric phase, respectively. The stronger upper shift of T{sub rt} value with respect to the bulk one and the weakly affected T{sub c} (T{sub c} bulk ∼ 665 K) are explained assuming misfit strain changes when crossing T{sub rt}. This finding opens new perspectives for piezoelectric PZT films in harsh applications.

• OSTI ID: 22304220
• Journal Information: Journal of Applied Physics, Vol. 115, Issue 21; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BUFFERS
EPITAXY
LEAD COMPOUNDS
MONOCLINIC LATTICES
NANOSTRUCTURES
OXYGEN COMPOUNDS
PHASE TRANSFORMATIONS
PIEZOELECTRICITY
PZT
SILICON
STRAINS
STRONTIUM TITANATES
SUBSTRATES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0400-1000 K
THIN FILMS
TITANIUM COMPOUNDS
X-RAY DIFFRACTION
ZIRCONIUM COMPOUNDS